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Freescale Semiconductor Technical Data
Document Number: MRF6S21100N Rev.
2, 1/2007
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 14.
5 dB Drain Efficiency — 25.
5% IM3 @ 10 MHz Offset — - 37 dBc in 3...