Part Number
|
FDB2614 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 27, 2007 |
Detailed Description
|
FDB2614 — N-Channel PowerTrench® MOSFET
November 2013
FDB2614
N-Channel PowerTrench® MOSFET
200 V, 62 A, 27 mΩ
Featur...
|
Datasheet
|
FDB2614
|
Overview
FDB2614 — N-Channel PowerTrench® MOSFET
November 2013
FDB2614
N-Channel PowerTrench® MOSFET
200 V, 62 A, 27 mΩ
Features
• RDS(on) = 22.
9 mΩ ( Typ.
)@ VGS = 10 V, ID = 31 A • High Performance Trench technology for Extremely Low
RDS(on)
• Low Gate Charge • High Power and Current Handing Capability
General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
D
G S
D2-PAK
G S
Absolute Maximum Ratings TC = 2...
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