Part Number
|
K4M28163PH |
Manufacturer
|
Samsung semiconductor |
Description
|
2M x 16Bit x 4 Banks Mobile SDRAM |
Published
|
Mar 27, 2007 |
Detailed Description
|
com
K4M28163PH - R(B)E/G/C/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. ...
|
Datasheet
|
K4M28163PH
|
Overview
com
K4M28163PH - R(B)E/G/C/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.
8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) -.
DS (Driver Strength) -.
DPD (Deep Power Down) • DQM for masking.
• Auto refresh.
•...
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