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CMS-S032-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.
814 * 0.
814 mm
2
Bond Pad size(B) :
0.
686 * 0.
686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Ti/Ni/Ag
Electrical Characteristics
Sym.
Spec.
Limit
Unit
Maximum Instantaneous Forward Volt ° at IF : 1.
0Amp.
25 C
VF max
0.
52
Volt
Minimum Instantaneous Reverse Voltage ° at IR : 200 uA 25 C
VR min.
43
Volt.
Minimum Non-repetitive Peak Surge current at 25 C
°
IFSM
25
Amp
Storage Temperature
TSTG
-65 to +125
°
C
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