2N3055(
NPN), MJ2955(
PNP)
Preferred Device
Complementary Silicon Power
Transistors
Complementary silicon power
transistors are designed for general−purpose switching and amplifier applications.
Features http://onsemi.
com
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • •
VCE(sat) = 1.
1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb−Free Packages are Available*
15 AMPERE POWER
TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS
Value 60 70 100 7 15 7 115 0.
657 − 65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc W W/°C °C TO−204AA (TO−3) CASE 1−07 STYLE 1
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage...