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GENERAL PURPOSE L TO X-BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE: 0.
8 dB typical at 4 GHz • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.
0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
Optimum Noise Figure, NFOPT (dB)
4 3.
5 GA 3 2.
5 2 1.
5 1 NF 0.
5 0 1
NE76184AS
NOISE FIGURE & ASSOCIATED GAIN vs.
FREQUENCY VDS = 3 V, IDS = 10 mA
24 21 18 15 12 9 6 3 0 10 20
DESCRIPTION
NE76184AS is a high performance gallium arsenide metal semiconductor field effect
transistor housed in an epoxysealed, metal/ceramic package.
Its low noise figure makes this device appropriate for use in the second or third stages of low noise ampli...