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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
0.
2+/-0.
05
(0.
22) (0.
22) (0.
25)
RoHS Compliance,Silicon MOSFET Power
Transistor,175MHz,520MHz,7W
DESCRIPTION
OUTLINE DRAWING RD07MVS2 is a MOS FET type
transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
6.
0+/-0.
15 This device have an interal monolithic zener diode from gate to source for ESD protection.
4.
9+/-0.
15
4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05
1
1.
0+/-0.
05
2
FEATURES
•High power gain: Pout7W, Gp10dB @Vdd=7.
2V,f=520MHz •High Efficiency: 60%typ.
(175MHz) •High Efficiency: 55%typ.
(520MHz) •Integrated gate protection diode
3
(0.
25)
IN...