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STU/D3055L2-60
SamHop Microelectronics Corp.
Nov 26 , 2004 Ver1.
2
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
20V
FEATURES
( m £[ ) Max
ID
14A
RDS(ON)
Super high dense cell design for low RDS(ON).
65 @ VGS = 4.
5V 90 @ VGS = 2.
5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D G S
G D
S
G
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage
a Drain Current-Continuous @T J=125 C b -Pulsed (300ms Pulse Width)
Symbol VDS VGS ID IDM IS PD TJ, TSTG
Limit 20 12 14 23 10 50 -55 to 150
Unit V V A A A W C
Drain-Source Diode ...