Part Number
|
STU36NB20 |
Manufacturer
|
ST Microelectronics |
Description
|
N-CHANNEL MOSFET |
Published
|
Apr 5, 2007 |
Detailed Description
|
www.DataSheet4U.com
STU36NB20
N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STU36NB20
s s s s s s
...
|
Datasheet
|
STU36NB20
|
Overview
www.
DataSheet4U.
com
STU36NB20
N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STU36NB20
s s s s s s
V DSS 200 V
R DS(on) 0.
065 Ω
ID 36 A
TYPICAL RDS(on) = 0.
052 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING
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DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled ga...
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