STP08IE120F4
Emitter Switched Bipolar
Transistor ESBT® 1200 V - 8 A - 0.
10 Ω
Preliminary Data
General features
com
VCS(ON) 0.
8 V
IC 8A
RCS(ON) 0.
10 W
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High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO220FP-4L
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Applications
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Internal schematic diagrams
Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.
It is designed for use in Gate Driven based topologies.
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