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MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by BDW42/D
Darlington Complementary Silicon Power
Transistors
.
.
.
designed for general purpose and low speed switching applications.
• High DC Current Gain – hFE = 2500 (typ.
) @ IC = 5.
0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.
) — BDW46 VCEO(sus) = 100 Vdc (min.
) — BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.
0 Vdc (max.
) @ IC = 5.
0 Adc VCE(sat) = 3.
0 Vdc (max.
) @ IC = 10.
0 Adc • Monolithic Construction with Built–In Base Emitter Shunt resistors • TO–220AB Compact Package MAXIMUM RATINGS
BDW42 * BDW46 BDW47 *
*Motorola Preferred Device
NPN PNP
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