MBR835, MBR840, MBR845
Preferred Devices
Axial Lead Rectifiers
.
.
.
employing the
Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
http://onsemi.
com
• • • • • • •
High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Low Forward Voltage High Surge Capacity
SCHOTTKY BARRIER RECTIFIERS 8.
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