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MBT6429DW1T1 Amplifier
Transistors
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC 6429DW1T1 45 55 6.
0 200 Unit Vdc Vdc Vdc mAdc (4) Symbol PD 150 RqJA TJ, Tstg 833 −55 to +150 °C/W °C Max Unit mW (3)
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(2)
(1)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
(5)
(6)
MARKING DIAGRAM
6
1.
Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended foot print.
1 S...