www.
DataSheet4U.
com
MJD18002D2 Bipolar
NPN Transistor
High Speed, High Gain Bipolar
NPN Power
Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network
The MJD18002D2 is a state−of−the−art high speed, high gain bipolar
transistor (H2BIP).
Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.
Therefore, there is no longer a need to guarantee an hFE window.
Features http://onsemi.
com
POWER
TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS
• Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due ...