2SC2290A
TOSHIBA
TRANSISTOR SILICON
NPN EPITAXIAL PLANAR TYPE
2SC2290A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 12.
5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.
) : Gp = 11.
8dB (Min.
) : ηC = 35% (Min.
)
Intermodulation Distortion : IMD = −30dB (Max.
)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 45 45 18 4 20 175 175
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