UTC TIP112
NPN EPITAXIAL PLANAR
TRANSISTOR
NPN EPITAXIAL SILICON DARLINGTON
TRANSISTOR
FEATURES
* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use
EQUIVALENT TEST (R1≅10kΩ, R2≅0.
6Ω)
B
C
E
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
SYMBOL
VCBO www.
DataSheet4U.
com VCEO VEBO Ic Icp IB Pc Pc Tj TSTG
VALUE
100 100 5 2 4 50 2 50 150 -65 ~ +150
UNIT
V V V A A mA W W °...