Preliminary Specification Dual N-Channel Dual-Gate MOSFET
□ Description
The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect
transistor that utilizes MOS construction.
It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect against excessive input voltage surges.
The
transistor has a SOT363 microminiature plastic package.
TMF3201J
SOT363
Unit in mm
□ Features
- Two AGC amplifiers in a single package - Integrated gate protect...