Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev.
0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz.
This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.
Final Application • Typical Two - Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 5 Watts Avg.
, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 29 dB Power Added Efficiency — 29% IMD — - 34 dBc Driver Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 105...

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