| Part Number | MUN5137DW |
| Manufacturer | Weitron Technology |
| Title | PNP Transistor |
| Description | MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 3 2 1 6 5 4 1 4 5 6 2 3 SOT-363(SC-88) PNP+PNP M aximum R atings ( TA=25 C unle... |
| Features |
N
http://www.weitron.com.tw
MUN5111DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
WE IT R ON
Symbol Min Typ Max Unit
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage (IC=-2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=-10 uA ,IE=0) Collector-Bas...
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| File Size | 444.70KB |
| Datasheet |
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MUN5137DW1 : MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang.
MUN5137DW1T1 : LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. . Simplifies Circuit Desi.
MUN5137DW1T1 : Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. . Simplifies Circuit Design . Reduces Board Space . R.
MUN5137DW1T1 : MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium. Features http:.
MUN5137DW1T1G : MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change.