NTHD5903 Power MOSFET −20 V, −3.
0 A, Dual P−Channel ChipFETE Features • • • • Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space Pb−Free Package is Available http://onsemi.
com V(BR)DSS −20 V RDS(on) TYP 130 mW @ −4.
5 V 215 mW @ −2.
5 V S1 ID MAX −3.
0 A Applications • Power Management in Portable and Battery−Powered Products; i.
e.
, Cellular and Cordless Telephones and PCMCIA Cards G1 S2 G2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note...

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