BC517
NPN Darlington
Transistor
January 2005
BC517
NPN Darlington
Transistor
• This device is designed for applications requiring extremely high current gain at currents to 1.
0A.
• Sourced from process 05.
1
TO-92
1.
Collector 2.
Base 3.
Emitter
Absolute Maximum Ratings *
Symbol
VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Ta = 25°C unless otherwise noted
Parameter
Value
30 40 10
com
Units
V V V A °C
- Continuous
1.
2 -55 ~ 150
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.
NOTES: 1.
T...