CMS-S087-060
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
2.
210* 2.
210 mm
2
Bond Pad size(B) :
2.
083 *2.
083 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Ti/Ni/Ag
Electrical Characteristics
Sym.
Spec.
Limit
Unit
Maximum Instantaneous Forward Volt ° at IF : 8.
0Amp.
25 C
com
VF max
0.
73
Volt
Minimum Instantaneous Reverse Voltage ° at IR : 300 uA 25 C
VR min.
63
Volt.
Minimum Non-repetitive Peak Surge current at 25 C
°
IFSM
150
Amp
Storage Temperature
TSTG
-65 to +125
°
C
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