Part Number
|
AP2312GN |
Manufacturer
|
Advanced Power Electronics |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
May 3, 2007 |
Detailed Description
|
AP2312GN
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ ...
|
Datasheet
|
AP2312GN
|
Overview
AP2312GN
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Capable of 2.
5V gate drive ▼ Lower on-resistance ▼ Surface mount package
S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 50mΩ 4.
3A
Description
SOT-23
G
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage
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Parameter
Rating 20 ±12
Units V V A A A W W/ ℃ ℃ ℃
Cont...
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