N-Channel MOSFET
FCP4N60 600V N-Channel MOSFET FCP4N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8nC) • Low effective output capacitance (typ. Coss.eff = 32pF) • 100% avalanche tested SuperFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing...
Fairchild Semiconductor