FDMB3800N Dual N-Channel PowerTrench® MOSFET January 2006 FDMB3800N Dual N-Channel PowerTrench® MOSFET 4.
8A, 30V, 40mΩ General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
LE A REE I DF Features „ RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.
5 V „ Fast switching speed „ Low gate charge „ High performance trench technology for extremely low RDS(ON) ...

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