| Part Number | AP2303GN |
| Manufacturer | Advanced Power Electronics |
| Title | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-e... |
| Features |
200407042
AP2303GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=-250uA
Min. -30 -1 -
Typ. -0.1 2 6.2 1.4 0.3 7.6 8.2 17.5 9 230 130.4 40
Max. Units 240 460 -1 -10 ±100 V V/℃ mΩ mΩ V ...
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| File Size | 101.81KB |
| Datasheet |
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AP2303GN-HF-3 : Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2303GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches and DC-DC converters. D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 + 20 -1.9 -1.5 -10 .