FQB9N50CF

FQB9N50CF 500V N-Channel MOSFET October 2006 FRFET FQB9N50CF 500V N-Channel MOSFET Features • 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V • Low gate charge ( typical 28nC) • Low Crss ( typical 24pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced u...