CEG8205A
Dual N-Channel Enhancement Mode Field Effect
Transistor FEATURES
20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.
5V.
RDS(ON) = 30mΩ (typ) @VGS = 2.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
G2 S2 S2 D
D S1 S1 G1
1 2 3 4
8 D 7 S2 6 S2 5 G2
G1 S1 S1 D
TSSOP-8
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C
±12
6 25 1.
5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
T...