CEM4953A
Dual P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-30V, -4.
5A, RDS(ON) = 58mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 D1 7 D2 6 D2 5
PRELIMINARY
5
SO-8 1
1 S1 2 G1 3 S2 4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C
±20
-4.
5 -15 2.
0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
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