Part Number
|
STRH12P10ESY3 |
Manufacturer
|
ST Microelectronics |
Description
|
Power MOSFET |
Published
|
May 7, 2007 |
Detailed Description
|
STRH12P10ESY3
P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET™ Power MOSFET
General features
Type S...
|
Datasheet
|
STRH12P10ESY3
|
Overview
STRH12P10ESY3
P-channel 100V - 0.
265Ω - TO-257AA Rad-hard low gate charge STripFET™ Power MOSFET
General features
Type STRH12P10ESY3
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VDSS 100V
Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-257AA
Internal schematic diagram
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Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects.
It is therefore suitable as power switch in ma...
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