N-Channel Enhancement Mode Field Effect
Transistor FEATURES
Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.
9Ω 0.
9Ω 0.
9Ω ID 10A 10A 10A e @VGS 10V 10V 10V
CEP1165/CEB1165 CEF1165
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
G
CEP SERIES TO-220
D
S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg
f
TO-220F
Units V V
600
±30
10 40 167 1.
33 -55 to 150 10 40 50 0.
4
...