CEP20N06/CEB20N06
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
60V, 25A, RDS(ON) =55mΩ @VGS = 10V.
RDS(ON) =75mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60
Units V V A A W W/ C C
±20
25 70 83 0.
56 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Tempe...