CEP21A3/CEB21A3
Nov.
2002
4
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
30V , 20A , RDS(ON)=45mΩ @VGS=10V.
RDS(ON)=70mΩ @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
4
D
G
G
S
G D S
S
CEP SERIES TO-220
CEB SERIES TO-263(DD-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C
...