CEP50P03/CEB50P03
P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-30V, -47A, RDS(ON) =20mΩ @VGS = -10V.
RDS(ON) =32mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
±20
-47 -188 79 0.
53 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Sto...