CEP62A3/CEB62A3
Feb.
2003
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
30V , 60A , RDS(ON)=10mΩ @VGS=10V.
RDS(ON)=15m Ω @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
4 4
D
G
G D S
G
S
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C
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