CEP76139/CEB76139
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
30V, 75A, RDS(ON) = 7mΩ @VGS = 10V.
RDS(ON) = 10mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
100% avalanche tested.
TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30
Units V V A A W W/ C mJ A C
±20
75 225 75 0.
5 228 100 -55 to 175
Maximum Power Dissipation @ TC = 25 C ...