N-Channel Enhancement Mode Field Effect
Transistor FEATURES
Type CEP80N75 CEB80N75 CEF80N75 VDSS 75V 75V 75V RDS(ON) 13mΩ 13mΩ 13mΩ ID 80A 80A 80A
e
CEP80N75/CEB80N75 CEF80N75
@VGS 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
G
CEP SERIES TO-220
D
S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD EAS IAS TJ,Tstg
f
TO-220F...