CEPF630B/CEBF630B CEIF630B/CEFF630B
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
Type CEPF630B CEBF630B CEIF630B CEFF630B VDSS 200V 200V 200V 200V RDS(ON) 0.
4Ω 0.
4Ω 0.
4Ω 0.
4Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D PRELIMINARY
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 2...