CEPF634/CEBF634 CEIF634/CEFF634
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
Type CEPF634 CEBF634 CEIF634 CEFF634 VDSS 250V 250V 250V 250V RDS(ON) 0.
45Ω 0.
45Ω 0.
45Ω 0.
45Ω ID 8.
1A 8.
1A 8.
1A 8.
1A
d
@VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unl...