Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
CED4279/CEU4279
D1/D2
FEATURES
40V , 14A , RDS(ON) = 32mΩ @VGS = 10V.
RDS(ON) = 46mΩ @VGS = 4.
5V.
-40V , -9A , RDS(ON) = 72mΩ @VGS = 10V.
RDS(ON) = 110mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-252-4L package.
S1 G1 S2 G2 CEU SERIES TO-252-4L D1/D2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol N-Channel VDS VGS ID e IDM PD TJ,Tstg 40
P-Channel 40
Units V V A A W W/ C C
±20
14 56 10.
4 ...