CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
Spec.
No.
: C842J3 Issued Date : 2003.
05.
25 Revised Date : Page No.
: 1/4
BTD1758J3
Features
• Low VCE(sat), VCE(sat)=0.
4 V (typical), at IC / IB = 2A / 0.
5A • Excellent current gain characteristics • Complementary to BTB1182J3
Symbol
BTD1758J3
Outline
TO-252
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg
Limits 40 30 5 2 5 (Note)...