CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
Spec.
No.
: C820D3 Issued Date : 2005.
03.
29 Revised Date :2006.
04.
21 Page No.
: 1/ 4
BTD1805D3
Description
The device is manufactured in
NPN planar technology by using a “Base Island” layout.
The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capability • Pb-free package
Applications
• CCFL drivers • Voltage
regulators • Relay drivers • High efficiency low voltage switching applications
Symbol
BTD1805D3
Outline
TO-126ML
B：Base C...