CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD1805J3
BVCEO IC RCESAT
Spec.
No.
: C820J3 Issued Date : 2004.
12.
19 Revised Date :2010.
12.
08 Page No.
: 1/ 6
60V 5A 100mΩ
Description
The device is manufactured in
NPN planar technology by using a “Base Island” layout.
The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capability • RoHS compliant package
Applications
• CCFL drivers • Voltage
regulators • Relay drivers • High efficiency low voltage switching applications
Symbol
BT...