F-46
01/99
NJ1800DL Process
Silicon Junction Field-Effect
Transistor
¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise
10 mA +150°C – 65°C to +175°C
D
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
Device in this Databook based on the NJ1800DL Process.
Datasheet
IF1801
S
Die Size = 0.
052" X 0.
052" All Bond Pads ≥ 0.
004" Sq.
Substrate is also Gate.
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At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Chara...