F-44
01/99
NJ1800D Process
Silicon Junction Field-Effect
Transistor
¥ Ultra Low-Noise Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
D
G
Devices in this Databook based on the NJ1800D Process.
Datasheet
U290, U291
S
Die Size = 0.
052" X 0.
052" All Bond Pads ≥ 0.
004" Sq.
Substrate is also Gate.
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At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Drain Source O...