F-4
01/99
NJ14AL Process
Silicon Junction Field-Effect
Transistor
¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.
0 Ghz
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.
016" X 0.
016" All Round Bond Pads = 0.
0028" All Square Bond Pads = 0.
004" Substrate is also Gate.
Devices in this Databook based on the NJ14AL Process.
Datasheet
IF140, IF140A IF142
www.
DataSheet4U.
com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characte...