F-8
01/99
NJ26 Process
Silicon Junction Field-Effect
Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.
016" X 0.
016" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ26A Process.
Datasheet
2N4416, 2N4416A 2N5484, 2N5485 2N5486 J304, J305 VCR11N
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At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forw...