F-10
01/99
NJ26A Process
Silicon Junction Field-Effect
Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.
016" X 0.
016" All Round Bond Pads = 0.
0028" All Square Bond Pads = 0.
004" Substrate is also Gate.
Devices in this Databook based on the NJ26A Process.
Datasheet
2N4416, 2N4416A
www.
DataSheet4U.
com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward T...