F-48
01/99
NJ3600L Process
Silicon Junction Field-Effect
Transistor
¥ Large Capacitance Detector Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
S-D
S-D
S-D G
Device in this Databook based on the NJ3600L Process.
Datasheet
IF3601 IF3602
G D-S
D-S
D-S
Die Size = 0.
074" X 0.
074" All Bond Pads ≥ 0.
004" Sq.
Substrate is also Gate.
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At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Sou...