F-40
01/99
NJ903 Process
Silicon Junction Field-Effect
Transistor
¥ Analog Switch ¥ Digital Switch ¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
S-D
G D-S
Devices in this Databook based on the NJ903 Process.
S-D
Datasheet
IFN5432 IFN5433 IFN5434
G
Die Size = 0.
040" X 0.
040" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
D-S
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At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics ...